IXFH6N90
MOSFET N-CH 900V 6A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH6N90 is a HiPerFET™ N-Channel Power MOSFET designed for high voltage applications. It features a Drain-to-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C (Tc). This TO-247AD packaged device offers a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 2Ohm maximum at 3A, 10V. The gate charge (Qg) is 130 nC maximum at 10V, with input capacitance (Ciss) at 2600 pF maximum at 25V. The device operates over a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and high voltage power conversion systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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