IXFH67N10Q
MOSFET N-CH 100V 67A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFH67N10Q is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 67A at 25°C (Tc). The IXFH67N10Q offers a low on-resistance (Rds On) of 25mOhm maximum at 33.5A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 300W at 25°C (Tc), this component is suitable for demanding applications. The gate charge (Qg) is specified at 260nC maximum at 10V Vgs, and input capacitance (Ciss) is 4500pF maximum at 25V Vds. The TO-247AD (IXFH) package provides a robust thermal path for high-power handling. This MOSFET is commonly utilized in power supplies, motor control, and industrial automation systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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