IXFH67N10
MOSFET N-CH 100V 67A TO-247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH67N10 is a HiPerFET™ N-Channel Power MOSFET designed for high-performance applications. This component offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 67A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 25mOhm at 33.5A and 10V, this MOSFET ensures efficient power transfer. The device supports a gate drive voltage of 10V for optimal Rds On performance and has a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge (Qg) of 260 nC at 10V and an input capacitance (Ciss) of 4500 pF at 25V. With a maximum power dissipation of 300W (Tc), the IXFH67N10 is suitable for demanding power conversion and control circuits across various industrial sectors including power supplies, motor control, and renewable energy systems. It is housed in a TO-247AD (IXFH) package for through-hole mounting.
Additional Information
Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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