IXFH66N20Q
MOSFET N-CH 200V 66A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH66N20Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 66A at 25°C (Tc). With a maximum power dissipation of 400W (Tc) and a low on-resistance (Rds On) of 40mOhm at 33A and 10V, it is optimized for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 3700 pF at 25V. The device utilizes TO-247AD packaging for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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