IXFH60N60X
MOSFET N-CH 600V 60A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH60N60X is a high-performance N-Channel MOSFET from the HiPerFET™, Ultra X series, designed for demanding applications. This component offers a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 60A at 25°C, with a maximum power dissipation of 890W at the same temperature. Featuring a low on-resistance (Rds On) of 55mOhm at 30A and 10V, it minimizes conduction losses. The device has a gate charge (Qg) of 143 nC at 10V and input capacitance (Ciss) of 5800 pF at 25V. Packaged in a TO-247-3 through-hole configuration, it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for power factor correction, switch mode power supplies, and motor control applications.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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