IXFH60N20
MOSFET N-CH 200V 60A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFH60N20 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 60A at 25°C, with a low on-resistance (Rds On) of 33mOhm at 30A and 10V gate drive. The device offers a maximum power dissipation of 300W at the case temperature and a maximum gate charge (Qg) of 155 nC at 10V. Its TO-247AD (IXFH) package with through-hole mounting ensures robust thermal management. This MOSFET utilizes advanced Metal Oxide technology for efficient switching and is suitable for use in power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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