IXFH52N30Q
MOSFET N-CH 300V 52A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Q Class IXFH52N30Q is a 300V N-Channel Power MOSFET featuring low Rds(on) of 60mOhm at 500mA and 10V Vgs. This device offers a continuous drain current of 52A at 25°C (Tc) and a maximum power dissipation of 360W (Tc). It is housed in a TO-247AD (IXFH) package for through-hole mounting. Key parameters include a gate charge of 150 nC at 10V and an input capacitance of 5300 pF at 25V. The IXFH52N30Q is suitable for applications in industrial power supplies, motor control, and high-power switching. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH12N100Q
MOSFET N-CH 1000V 12A TO247AD
IXFP4N100Q
MOSFET N-CH 1000V 4A TO220AB
IXFA4N100Q-TRL
MOSFET N-CH 1000V 4A TO263
