IXFH42N50P2
MOSFET N-CH 500V 42A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH42N50P2 is an N-Channel Power MOSFET from the HiPerFET™, PolarP2™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 42 A at 25°C (Tc). With a maximum power dissipation of 830 W (Tc), it is designed for high-power applications. The TO-247AD (IXFH) package with through-hole mounting facilitates integration into demanding designs. Key electrical characteristics include a maximum Rds On of 145 mOhm at 500 mA and 10 V, and a gate charge (Qg) of 92 nC at 10 V. This device is suitable for use in power supply, motor control, and power factor correction applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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