IXFH40N50Q2
MOSFET N-CH 500V 40A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH40N50Q2 is a HiPerFET™ N-Channel Power MOSFET offering a 500V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). This device features a low on-resistance of 160mOhm maximum at 500mA and 10V Vgs. With a maximum power dissipation of 560W (Tc) and a gate charge of 110 nC at 10V, it is designed for high-efficiency switching applications. The IXFH40N50Q2 is housed in a TO-247AD package, suitable for through-hole mounting. Typical applications include power supplies, motor control, and industrial power systems. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 25 V |
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