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IXFH40N50Q2

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IXFH40N50Q2

MOSFET N-CH 500V 40A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH40N50Q2 is a HiPerFET™ N-Channel Power MOSFET offering a 500V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). This device features a low on-resistance of 160mOhm maximum at 500mA and 10V Vgs. With a maximum power dissipation of 560W (Tc) and a gate charge of 110 nC at 10V, it is designed for high-efficiency switching applications. The IXFH40N50Q2 is housed in a TO-247AD package, suitable for through-hole mounting. Typical applications include power supplies, motor control, and industrial power systems. Operating temperature ranges from -55°C to 150°C (TJ).

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)560W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4850 pF @ 25 V

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