IXFH40N30
MOSFET N-CH 300V 40A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH40N30 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 300V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device exhibits a low on-resistance (Rds On) of 85mOhm at 500mA and 10V Vgs. Key characteristics include a gate charge (Qg) of 200nC (Max) at 10V and an input capacitance (Ciss) of 4800pF (Max) at 25V. The IXFH40N30 utilizes advanced MOSFET technology and is housed in a TO-247AD package for through-hole mounting. It is suitable for use in industrial, power supply, and motor control applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |