IXFH36N55Q2
MOSFET N-CH 550V 36A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH36N55Q2 is an N-Channel HiPerFET™, Q2 Class power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 36A at 25°C (Tc), with a power dissipation capability of 560W (Tc). The IXFH36N55Q2 offers a low on-resistance of 180mOhm maximum at 500mA and 10V gate drive. Key parameters include a gate charge (Qg) of 110 nC maximum at 10V and input capacitance (Ciss) of 4100 pF maximum at 25V. It is packaged in a TO-247AD (IXFH) through-hole configuration, suitable for demanding power conversion circuits found in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH14N100Q2
MOSFET N-CH 1000V 14A TO247AD
IXFR14N100Q2
MOSFET N-CH 1000V 9.5A ISOPLS247
IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264
