IXFH36N55Q
MOSFET N-CH 550V 36A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH36N55Q is an N-Channel Power MOSFET from the HiPerFET™, Q Class series. This component offers a Drain to Source Voltage (Vdss) of 550V and a continuous drain current (Id) of 36A at 25°C. Key characteristics include a low on-resistance (Rds On) of 160mOhm at 500mA and 10V, and a maximum power dissipation of 500W. The device features a gate charge (Qg) of 128 nC (max) at 10V and input capacitance (Ciss) of 4500 pF (max) at 25V. Designed for efficient power conversion, it is housed in a TO-247AD package suitable for through-hole mounting. This MOSFET is utilized in high-voltage switching applications across industries such as industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH12N100Q
MOSFET N-CH 1000V 12A TO247AD
IXFP4N100Q
MOSFET N-CH 1000V 4A TO220AB
IXFA4N100Q-TRL
MOSFET N-CH 1000V 4A TO263
