IXFH35N30
MOSFET N-CH 300V 35A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH35N30 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 35A at 25°C case temperature. Its low on-resistance (Rds On) of 100mOhm is achieved at 500mA and 10V gate-source voltage, facilitating reduced conduction losses. The MOSFET offers a maximum power dissipation of 300W at 25°C case temperature and a gate charge (Qg) of 200 nC at 10V. Input capacitance (Ciss) is rated at 4800 pF maximum at 25V. The TO-247AD (IXFH) package with through-hole mounting is suitable for demanding thermal management. This IXYS component finds application in power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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