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IXFH34N50P3

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IXFH34N50P3

MOSFET N-CH 500V 34A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH34N50P3 is a high-performance N-Channel MOSFET from the HiPerFET™, Polar3™ series, designed for demanding applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) capability of 34A at 25°C (Tc). With a maximum power dissipation of 695W (Tc) and a low Rds On of 170mOhm at 17A and 10V, it offers excellent efficiency. The device has a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 3260 pF at 25V. Packaged in a TO-247AD (IXFH) through-hole configuration, it operates across a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in power factor correction, switch-mode power supplies, and high-voltage switching.

Additional Information

Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs170mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)695W (Tc)
Vgs(th) (Max) @ Id5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3260 pF @ 25 V

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