IXFH32N50Q
MOSFET N-CH 500V 32A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH32N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency applications. Featuring a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 32 A at 25°C (Tc), this component offers a maximum power dissipation of 360 W (Tc). Its low on-resistance (Rds On) of 160 mOhm at 16 A and 10 V gate drive voltage, coupled with a gate charge (Qg) of 190 nC at 10 V, contributes to efficient switching performance. The MOSFET utilizes Metal Oxide technology and is housed in a TO-247AD (IXFH) package suitable for through-hole mounting. With a junction temperature range of -55°C to 150°C, the IXFH32N50Q is well-suited for use in power supply, motor control, and industrial power applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4925 pF @ 25 V |
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