IXFH32N50
MOSFET N-CH 500V 32A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH32N50 is an N-Channel Power MOSFET designed for high-performance applications. This device offers a 500V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 32A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). Key parameters include a low on-resistance of 150mOhm at 15A and 10V (Vgs), and a gate charge (Qg) of 300nC at 10V. The input capacitance (Ciss) is rated at a maximum of 5700pF at 25V. Packaged in a TO-247AD (IXFH) through-hole configuration, this MOSFET operates across a wide temperature range from -55°C to 150°C (TJ). Its robust specifications make it suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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