IXFH32N48Q
MOSFET N-CH 480V 32A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH32N48Q is an N-Channel Power MOSFET from the HiPerFET™ series. This device features a drain-source voltage (Vdss) of 480V and a continuous drain current (Id) of 32A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it offers low on-resistance of 130mOhm at 15A and 10V (Vgs). Key parameters include a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 5200 pF at 25V. The MOSFET operates over an extended temperature range of -55°C to 150°C (TJ) and is housed in a TO-247AD (IXFH) package for through-hole mounting. This component is suitable for applications in power supplies, motor control, and high-voltage switching.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 480 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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