IXFH30N60X
MOSFET N-CH 600V 30A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFH30N60X HiPerFET™, Ultra X Series N-Channel Power MOSFET. This through-hole component features a 600V drain-source voltage (Vdss) and 30A continuous drain current (Id) at 25°C. With a maximum Rds(on) of 155mOhm at 15A and 10V Vgs, it offers efficient power switching. The device boasts a high power dissipation capability of 500W (Tc) and a low gate charge of 56nC at 10V Vgs. The input capacitance (Ciss) is rated at 2270pF maximum at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this TO-247-3 packaged MOSFET is suitable for applications in industrial power supplies, motor control, and renewable energy systems. The maximum gate-source voltage (Vgs) is ±30V.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2270 pF @ 25 V |
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