IXFH30N60Q
MOSFET N-CH 600V 30A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH30N60Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 600V drain-source breakdown voltage and a continuous drain current rating of 30A at 25°C case temperature. With a maximum on-resistance of 230mOhm at 10V gate-source voltage and 500mA drain current, it provides low conduction losses. The device offers a maximum power dissipation of 500W (Tc) and a typical gate charge of 125 nC at 10V. It is housed in a TO-247AD (IXFH) through-hole package, suitable for demanding power conversion circuits in industrial, automotive, and renewable energy sectors. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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