IXFH30N50
MOSFET N-CH 500V 30A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH30N50 is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 30A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is suitable for high-power switching applications. The Rds On is specified at a maximum of 160mOhm at 15A and 10V gate drive. Key parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 5700 pF at 25V. The device utilizes Metal Oxide technology and is housed in a TO-247AD (IXFH) through-hole package. This MOSFET is commonly employed in power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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