IXFH270N06T3
MOSFET N-CH 60V 270A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiperFET™, TrenchT3™ N-Channel Power MOSFET, part number IXFH270N06T3. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 270A at 25°C case temperature. The low on-resistance is rated at a maximum of 3.1mOhm at 100A and 10V gate-source voltage, facilitated by the TrenchT3™ technology. Gate charge is specified at 200 nC max at 10V, with input capacitance (Ciss) at 12600 pF max @ 25V. The MOSFET is housed in a TO-247-3 package for through-hole mounting and offers a maximum power dissipation of 480W. Operating temperature range is -55°C to 175°C. This component is suitable for high-power switching applications across various industries including industrial power supplies, automotive systems, and renewable energy inverters.
Additional Information
Series: HiperFET™, TrenchT3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V |
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