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IXFH26N60Q

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IXFH26N60Q

MOSFET N-CH 600V 26A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH26N60Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at 25°C (Tc). With a maximum on-resistance (Rds On) of 250mOhm at 13A and 10V, it offers low conduction losses. The device boasts a high power dissipation capability of 360W (Tc) and a low gate charge (Qg) of 200nC at 10V, enabling fast switching speeds. Input capacitance (Ciss) is rated at 5100pF at 25V. The IXFH26N60Q is packaged in a TO-247AD (IXFH) through-hole package, suitable for demanding thermal management. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, motor drives, and industrial power applications.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V

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