IXFH26N55Q
MOSFET N-CH 550V 26A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH26N55Q is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 26A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The IXFH26N55Q has a low on-resistance (Rds On) of 230mOhm at 13A and 10V Vgs. Key parameters include a gate charge (Qg) of 92 nC at 10V Vgs and input capacitance (Ciss) of 3000 pF at 25V Vds. It is housed in a TO-247AD (IXFH) through-hole package for robust thermal management. This component is suitable for use in power supply, motor control, and industrial applications. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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