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IXFH26N55Q

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IXFH26N55Q

MOSFET N-CH 550V 26A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXFH26N55Q is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 26A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The IXFH26N55Q has a low on-resistance (Rds On) of 230mOhm at 13A and 10V Vgs. Key parameters include a gate charge (Qg) of 92 nC at 10V Vgs and input capacitance (Ciss) of 3000 pF at 25V Vds. It is housed in a TO-247AD (IXFH) through-hole package for robust thermal management. This component is suitable for use in power supply, motor control, and industrial applications. The operating junction temperature range is -55°C to 150°C.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V

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