IXFH26N50
MOSFET N-CH 500V 26A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFH26N50 is a 500V N-Channel Power MOSFET. This component offers a continuous drain current of 26A at 25°C with a maximum power dissipation of 300W at the same temperature, housed in a TO-247AD (IXFH) through-hole package. Key electrical characteristics include a low Rds(on) of 200mOhm at 13A and 10V, input capacitance (Ciss) of 4200pF at 25V, and gate charge (Qg) of 160nC at 10V. The device operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for high-voltage power conversion applications across industrial and power supply sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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