IXFH24N50Q
MOSFET N-CH 500V 24A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH24N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source breakdown voltage (Vdss) of 500V and a continuous drain current (Id) capability of 24A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device exhibits a low on-resistance (Rds On) of 230mOhm at 12A and 10V gate drive, and a typical gate charge (Qg) of 95nC at 10V. It is packaged in a TO-247AD through-hole configuration, suitable for demanding thermal management. This MOSFET is utilized in various industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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