IXFH22N55
MOSFET N-CH 550V 22A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH22N55 is a HiPerFET™ N-Channel Power MOSFET designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 22A at 25°C. With a low on-resistance (Rds On) of 270mOhm at 11A and 10V gate drive, it offers efficient power switching. The device boasts a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 170 nC at 10V. Packaged in a TO-247AD (IXFH) through-hole configuration, the IXFH22N55 is suitable for demanding power conversion and control circuits across industries such as industrial power supplies, motor drives, and renewable energy systems. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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