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IXFH22N55

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IXFH22N55

MOSFET N-CH 550V 22A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH22N55 is a HiPerFET™ N-Channel Power MOSFET designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 22A at 25°C. With a low on-resistance (Rds On) of 270mOhm at 11A and 10V gate drive, it offers efficient power switching. The device boasts a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 170 nC at 10V. Packaged in a TO-247AD (IXFH) through-hole configuration, the IXFH22N55 is suitable for demanding power conversion and control circuits across industries such as industrial power supplies, motor drives, and renewable energy systems. Its operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs270mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V

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