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IXFH220N06T3

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IXFH220N06T3

MOSFET N-CH 60V 220A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXFH220N06T3 is a HiperFET™, TrenchT3™ N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 220A at 25°C (Tc). The low on-resistance (Rds On) of 4mOhm at 100A and 10V gate drive, coupled with a maximum power dissipation of 440W (Tc), makes it suitable for high-power switching and motor control applications. Key parameters include a gate charge (Qg) of 136 nC @ 10V and input capacitance (Ciss) of 8500 pF @ 25V. The IXFH220N06T3 is housed in a standard TO-247-3 package, facilitating through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V. This device finds utility in industrial power supplies, electric vehicle systems, and high-current DC-DC converters.

Additional Information

Series: HiperFET™, TrenchT3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)440W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8500 pF @ 25 V

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