IXFH21N50Q
MOSFET N-CH 500V 21A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH21N50Q is a high-performance N-channel Power MOSFET designed for demanding power applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 21A at 25°C (Tc). With a low on-resistance (Rds On) of 250mOhm at 10.5A and 10V (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 280W (Tc) and a gate charge (Qg) of 84nC at 10V. The input capacitance (Ciss) is 3000pF at 25V. Packaged in a TO-247AD (IXFH) through-hole configuration, it is suitable for high-power switching applications across industries such as industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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