IXFH21N50F
MOSFET N-CH 500V 21A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH21N50F is a HiPerRF™ series N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). With a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 250mOhm at 10.5A and 10V Vgs, it offers efficient power handling. The device has a gate charge (Qg) of 77 nC maximum at 10V Vgs and input capacitance (Ciss) of 2600 pF maximum at 25V Vds. This device is housed in a TO-247-3 package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. The IXFH21N50F is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-247 (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFX55N50F
MOSFET N-CH 500V 55A PLUS247-3
IXFH12N50F
MOSFET N-CH 500V 12A TO247
IXFK21N100F
MOSFET N-CH 1000V 21A TO264
