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IXFH21N50F

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IXFH21N50F

MOSFET N-CH 500V 21A TO247

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH21N50F is a HiPerRF™ series N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). With a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 250mOhm at 10.5A and 10V Vgs, it offers efficient power handling. The device has a gate charge (Qg) of 77 nC maximum at 10V Vgs and input capacitance (Ciss) of 2600 pF maximum at 25V Vds. This device is housed in a TO-247-3 package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. The IXFH21N50F is commonly utilized in power supply units, industrial motor control, and lighting applications.

Additional Information

Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10.5A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id5.5V @ 4mA
Supplier Device PackageTO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V

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