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IXFH20N80Q

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IXFH20N80Q

MOSFET N-CH 800V 20A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH20N80Q is an N-Channel HiPerFET™ MOSFET designed for high-voltage applications. This component features a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 360W (Tc) and a low on-resistance (Rds On) of 420mOhm at 10A and 10V, it offers efficient switching performance. The MOSFET is housed in a TO-247AD package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5100 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device is utilized in power supply, industrial motor control, and high-voltage conversion applications.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs420mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V

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