IXFH20N60Q
MOSFET N-CH 600V 20A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFH20N60Q is a 600V N-Channel power MOSFET in a TO-247AD package. This device offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 300W (Tc). Key electrical parameters include a Vds of 600V, an Rds(on) of 350mOhm at 10A and 10V, and a gate charge (Qg) of 90 nC at 10V. Input capacitance (Ciss) is a maximum of 3300 pF at 25V. Designed for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). The IXFH20N60Q is suitable for applications in power supplies, industrial motor control, and high-voltage switching power applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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