IXYS IXFH1988 is a high-performance N-channel Power MOSFET designed for demanding applications. This TO-247 packaged device offers a continuous drain current of 19A and a low ON-resistance, ensuring efficient power delivery. Key electrical characteristics include a drain-source breakdown voltage of 100V and a gate-source threshold voltage typically ranging from 2V to 4V. Its robust construction and thermal management capabilities make it suitable for use in power supplies, motor control, and automotive systems. The IXFH1988 represents a reliable solution for designers requiring high current handling and low power loss in their circuit designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk