IXFH18N60X
MOSFET N-CH 600V 18A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH18N60X is a HiPerFET™, Ultra X series N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Current rating of 18A at 25°C (Tc). With a maximum power dissipation of 320W (Tc), it is suitable for high-power switching. The device exhibits a low on-resistance (Rds On) of 230mOhm at 9A and 10V gate drive. Key parameters include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 1440 pF at 25V. The IXFH18N60X is housed in a TO-247-3 package, allowing for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply, motor control, and industrial applications.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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