IXFH17N80Q
MOSFET N-CH 800V 17A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Q Class IXFH17N80Q is an N-Channel power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 17 A at 25°C. The device offers a low on-resistance (Rds On) of 600 mOhm at 500 mA and 10 V gate drive. With a maximum power dissipation of 400 W and a junction temperature range of -55°C to 150°C, it is suitable for demanding power conversion circuits. Key parameters include a gate charge (Qg) of 95 nC at 10 V and an input capacitance (Ciss) of 3600 pF at 25 V. The IXFH17N80Q is housed in a TO-247AD package for through-hole mounting, making it a robust choice for industrial power supplies, solar inverters, and electric vehicle charging systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH12N100Q
MOSFET N-CH 1000V 12A TO247AD
IXFP4N100Q
MOSFET N-CH 1000V 4A TO220AB
IXFA4N100Q-TRL
MOSFET N-CH 1000V 4A TO263
