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IXFH17N80Q

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IXFH17N80Q

MOSFET N-CH 800V 17A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS HiPerFET™, Q Class IXFH17N80Q is an N-Channel power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 17 A at 25°C. The device offers a low on-resistance (Rds On) of 600 mOhm at 500 mA and 10 V gate drive. With a maximum power dissipation of 400 W and a junction temperature range of -55°C to 150°C, it is suitable for demanding power conversion circuits. Key parameters include a gate charge (Qg) of 95 nC at 10 V and an input capacitance (Ciss) of 3600 pF at 25 V. The IXFH17N80Q is housed in a TO-247AD package for through-hole mounting, making it a robust choice for industrial power supplies, solar inverters, and electric vehicle charging systems.

Additional Information

Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)400W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V

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