IXFH15N60
MOSFET N-CH 600V 15A TO-247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH15N60 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage, high-current applications. This device features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 15 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it is suitable for demanding power conversion tasks. Key electrical characteristics include a low on-resistance (Rds On) of 500 mOhm at 500 mA and 10 V, and a gate charge (Qg) of 170 nC at 10 V. The input capacitance (Ciss) is specified at 4500 pF maximum at 25 V. This component utilizes Metal Oxide technology and is housed in a TO-247-3 package with a through-hole mounting type. Typical applications include power supplies, inverters, and motor control systems.
Additional Information
Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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