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IXFH15N100Q

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IXFH15N100Q

MOSFET N-CH 1000V 15A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH15N100Q is a high-performance N-Channel Power MOSFET from the HiPerFET™ series. This component offers a 1000V drain-to-source voltage (Vdss) and a continuous drain current of 15A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is suitable for demanding applications. Key electrical characteristics include a maximum on-resistance (Rds On) of 700mOhm at 500mA and 10V, and a gate charge (Qg) of 170 nC at 10V. The input capacitance (Ciss) is rated at 4500 pF at 25V. This device features a TO-247AD (IXFH) through-hole package, designed for efficient thermal management. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and high-voltage switching applications.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V

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