IXFH15N100
MOSFET N-CH 1000V 15A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH15N100 is a HiPerFET™ series N-Channel MOSFET designed for high voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 15A at 25°C. With a maximum power dissipation of 360W at 25°C, it offers robust thermal performance. The device has a typical Rds On of 700mOhm at 500mA and 10V, with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 4mA. Input capacitance (Ciss) is rated at 4500pF maximum at 25V, and gate charge (Qg) is 220nC maximum at 10V. Packaged in a TO-247AD (IXFH) through-hole configuration, this MOSFET is suitable for industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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