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IXFH14N80

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IXFH14N80

MOSFET N-CH 800V 14A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH14N80 is an N-Channel HiPerFET™ power MOSFET designed for demanding applications. This component features a 800 V drain-source voltage (Vdss) and a continuous drain current (Id) of 14 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc) and a low on-resistance (Rds On) of 700 mOhm at 500 mA and 10 V, it offers efficient power handling. The device utilizes Metal Oxide technology and is housed in a TO-247AD (IXFH) package for through-hole mounting. Key parameters include a gate charge (Qg) of 200 nC at 10 V and an input capacitance (Ciss) of 4870 pF at 25 V. It operates over a temperature range of -55°C to 150°C (TJ). This component is commonly found in power supply units, industrial motor control, and high-voltage switching applications.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4870 pF @ 25 V

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