IXFH14N80
MOSFET N-CH 800V 14A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH14N80 is an N-Channel HiPerFET™ power MOSFET designed for demanding applications. This component features a 800 V drain-source voltage (Vdss) and a continuous drain current (Id) of 14 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc) and a low on-resistance (Rds On) of 700 mOhm at 500 mA and 10 V, it offers efficient power handling. The device utilizes Metal Oxide technology and is housed in a TO-247AD (IXFH) package for through-hole mounting. Key parameters include a gate charge (Qg) of 200 nC at 10 V and an input capacitance (Ciss) of 4870 pF at 25 V. It operates over a temperature range of -55°C to 150°C (TJ). This component is commonly found in power supply units, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4870 pF @ 25 V |