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IXFH14N60P3

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IXFH14N60P3

MOSFET N-CH 600V 14A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXFH14N60P3 is a high-performance N-Channel Power MOSFET from the HiPerFET™, Polar3™ series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 14A (Tc) at 25°C. The IXFH14N60P3 offers a maximum power dissipation of 327W (Tc) and a low on-resistance (Rds On) of 540mOhm at 7A, 10V. Key parameters include a gate charge (Qg) of 25 nC @ 10V and input capacitance (Ciss) of 1480 pF @ 25V. The device is housed in a TO-247AD (IXFH) package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in applications such as power factor correction, switch mode power supplies, and industrial motor control.

Additional Information

Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs540mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)327W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V

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