IXFH14N100Q2
MOSFET N-CH 1000V 14A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q2 Class IXFH14N100Q2 is an N-Channel power MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 14A at 25°C (Tc). Key parameters include a maximum power dissipation of 500W (Tc) and a low on-resistance (Rds On) of 950mOhm at 7A and 10V. The device features a gate charge (Qg) of 83 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. Designed for through-hole mounting, it arrives in the TO-247AD (IXFH) package. This MOSFET is suitable for industries requiring robust power handling and high voltage insulation, such as industrial power supplies, renewable energy systems, and high-voltage converters. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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