IXFH14N100Q
MOSFET N-CH 1000V 14A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH14N100Q is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at 25°C. The device offers a low on-resistance (Rds On) of 750 mOhm at 7 A and 10 V, with typical gate charge (Qg) of 170 nC at 10 V. It is packaged in a TO-247AD through-hole package, enabling efficient heat dissipation up to 360 W. Key parameters include an input capacitance (Ciss) of 4500 pF at 25 V and a gate-source voltage (Vgs) tolerance of ±20 V. The IXFH14N100Q is suitable for power supply, motor control, and industrial applications requiring robust high-voltage switching performance.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |