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IXFH14N100Q

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IXFH14N100Q

MOSFET N-CH 1000V 14A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH14N100Q is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at 25°C. The device offers a low on-resistance (Rds On) of 750 mOhm at 7 A and 10 V, with typical gate charge (Qg) of 170 nC at 10 V. It is packaged in a TO-247AD through-hole package, enabling efficient heat dissipation up to 360 W. Key parameters include an input capacitance (Ciss) of 4500 pF at 25 V and a gate-source voltage (Vgs) tolerance of ±20 V. The IXFH14N100Q is suitable for power supply, motor control, and industrial applications requiring robust high-voltage switching performance.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs750mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V

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