IXFH14N100
MOSFET N-CH 1000V 14A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH14N100 is an N-Channel HiPerFET™ MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 14A at 25°C. With a low on-resistance (Rds On) of 750mOhm at 500mA and 10V, it offers efficient power handling capabilities, dissipating up to 360W at 25°C. The gate charge (Qg) is specified at 220 nC maximum at 10V, and the input capacitance (Ciss) is 4500 pF maximum at 25V. Manufactured using advanced MOSFET technology, this component is housed in a TO-247AD package suitable for through-hole mounting. The IXFH14N100 is utilized in power supply designs, industrial motor control, and high-voltage switching applications where robust performance and reliability are critical. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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