IXFH13N90
MOSFET N-CH 900V 13A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH13N90 is a 900V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 13A at 25°C and a maximum power dissipation of 300W. The IXFH13N90 offers a low on-resistance of 800mOhm at 500mA and 10V gate drive, with a gate charge (Qg) of 155 nC at 10V. Its input capacitance (Ciss) is rated at 4200 pF at 25V. The device is housed in a through-hole TO-247AD package, suitable for various industrial applications including power supplies, motor control, and lighting. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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