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IXFH13N80Q

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IXFH13N80Q

MOSFET N-CH 800V 13A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH13N80Q is an N-Channel Power MOSFET from the HiPerFET™ series, designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum power dissipation of 250W (Tc) and an Rds On of 700mOhm at 6.5A and 10V, it is suitable for demanding power conversion tasks. The device utilizes TO-247AD packaging for through-hole mounting, ensuring robust thermal performance. Key parameters include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 3250 pF at 25V. This MOSFET is utilized in power supplies, motor control, and industrial power systems.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 25 V

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