IXFH13N80Q
MOSFET N-CH 800V 13A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH13N80Q is an N-Channel Power MOSFET from the HiPerFET™ series, designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum power dissipation of 250W (Tc) and an Rds On of 700mOhm at 6.5A and 10V, it is suitable for demanding power conversion tasks. The device utilizes TO-247AD packaging for through-hole mounting, ensuring robust thermal performance. Key parameters include a gate charge (Qg) of 90 nC at 10V and input capacitance (Ciss) of 3250 pF at 25V. This MOSFET is utilized in power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
