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IXFH13N80

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IXFH13N80

MOSFET N-CH 800V 13A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH13N80 is an N-Channel Power MOSFET from the HiPerFET™ series, designed for high-voltage applications. This component features a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 13A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 800mOhm at 500mA and 10V gate-source voltage, with a gate charge (Qg) of 155 nC at 10V. Its high power dissipation capability of 300W (Tc) and a maximum junction temperature of 150°C make it suitable for demanding power conversion tasks. The IXFH13N80 is supplied in a TO-247AD package for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies, renewable energy systems, and motor control applications.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs800mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V

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