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IXFH13N50

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IXFH13N50

MOSFET N-CH 500V 13A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH13N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage switching applications. This through-hole component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at 25°C. With a maximum power dissipation of 180W (Tc), it is suitable for demanding power conversion circuits. The device exhibits a low on-resistance (Rds On) of 400mOhm at 6.5A and 10V gate-source voltage, complemented by a gate charge (Qg) of 120 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 2800 pF at 25V. The IXFH13N50 utilizes Metal Oxide technology and is packaged in a TO-247AD (IXFH) for efficient thermal management. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly found in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 6.5A, 10V
FET Feature-
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id4V @ 2.5mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V

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