IXFH13N100
MOSFET N-CH 1000V 12.5A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH13N100 is a high-performance N-Channel Power MOSFET from the HiPerFET™ series. This component offers a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 12.5A at 25°C (Tc). The device features a maximum power dissipation of 300W (Tc) and a low Rds On of 900mOhm at 500mA and 10V. Designed for through-hole mounting, it utilizes the TO-247AD (IXFH) package for efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 155 nC (Max) at 10V and input capacitance (Ciss) of 4000 pF (Max) at 25V. This MOSFET is suitable for applications in power supplies, industrial automation, and renewable energy systems. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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