IXFH12N50F
MOSFET N-CH 500V 12A TO247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH12N50F is an N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). With a low on-resistance (Rds On) of 400mOhm at 6A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 54 nC at 10V and an input capacitance (Ciss) of 1870 pF at 25V. Its high power dissipation capability of 180W (Tc) and an operating temperature range of -55°C to 150°C make it suitable for industrial power supplies, renewable energy systems, and high-voltage switching applications. The IXFH12N50F is packaged in a TO-247-3 through-hole format.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | TO-247 (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
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