IXFH12N120P
MOSFET N-CH 1200V 12A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFH12N120P is a HiPerFET™ Polar series N-Channel Power MOSFET designed for demanding applications. This component features a high drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) capability of 12A at 25°C (Tc). The IXFH12N120P offers a maximum on-resistance (Rds On) of 1.35 Ohms at 500mA and 10V gate drive. Key parameters include a gate charge (Qg) of 103 nC at 10V and input capacitance (Ciss) of 5400 pF at 25V. With a maximum power dissipation of 543W (Tc), this MOSFET is suitable for through-hole mounting in TO-247AD packaging. It operates across a wide temperature range of -55°C to 150°C (TJ). This device finds application in power factor correction, switch-mode power supplies, and high-voltage switching circuits across various industrial sectors.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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