IXFH12N120
MOSFET N-CH 1200V 12A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH12N120 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 12 A at 25°C. With a low on-resistance (Rds On) of 1.4 Ohms maximum at 500 mA and 10 V gate-source voltage, it offers efficient power handling up to 500 W (Tc). The MOSFET utilizes a TO-247AD (IXFH) through-hole package for robust mounting. Key parameters include a gate charge (Qg) of 95 nC maximum at 10 V and an input capacitance (Ciss) of 3400 pF maximum at 25 V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor control, and other high-power switching applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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